大功率IGBT串联电压不平衡机制研究

Unbalancing Voltage of High Power Series Connected IGBT Valve

随着电力电子技术及其应用的快速发展,高压大功率换流器的应用越来越多。大功率绝缘栅双极晶体管(insulation gate bipolar transistor,IGBT)串联是实现高压大功率自换相换流器的一个重要基础。大功率串联IGBT运行中,最难解决的是串联IGBT之间的电压不平衡问题。为推进高压大功率换流器的研究,对大功率串联IGBT中器件间的电压不平衡机制进行了系统的研究。根据IGBT阀在串联运行时的主要静态、动态过程,结合IGBT自身的特性,得出了影响产生串联IGBT电压不平衡的各个因素,并对各个元件间的电压不平衡度进行分析,为进行串联IGBT电压平衡化的控制打下基础。

With the fast development and widely application of power electronic technologies, the requirement for high power converters has been constantly increased. The connection of high power insulation gate bipolar transistor （IGBT） in series is a key issue in the high voltage and power self-commuted converter application. The bottleneck for the operation of series connected high power IGBTs is the unbalanced voltage distributed among the IGBTs. But systematic theories and studies in this respect have always been absent. The systematic study must be commenced on the unbalanced voltage to advance the research on high power converter equipment. Based on the static and dynamic processes during operation of the seriesly connected IGBT valve and considering the IGBT characteristics, the corresponding influences of the unbalancing voltage on the series connected IGBT valve were induced; and the grade of unbalancing voltage among the devices was analyzed, which laid a foundation for keeping the voltage balance of the seriesly connected IGBT.