球形汞膜吸附电位溶出法研究痕量铊

Determination of trace thallium by the adsorption potential stripping technique using a spheric mercury electrode

本文采用球形汞膜吸附电位溶出法对铊进行测定。选择0.1mNaAc,0.008mKI,它的线性范围为 0.002～0.01μgml^(-1),搅拌吸附8分钟,灵敏度为0.0006μgml(-1),并对吸附剂进行探讨,实验和理论吻合。

This paper describes determination of trace thallium by the adsorption potential stripping technique, using a spheric mercury film electrode in solution of 0. ImNaAc , 0. 008mKI. The thallium linear range is 0. 002-0. 01μgml-1,, The sensitivity is 0. 0006μgml-1 after stirring for 8min. theadsorp-tim mechanism is also discussed.