摘要
采用溶胶-凝胶法制备了过渡金属Mn掺杂的TiO2基稀磁半导体粉末.XRD结果表明,所有样品均为锐钛矿结构,不存在任何杂相,且随掺杂浓度的增大,晶格常数单调减小,表明Mn替代Ti进入晶格形成稀磁半导体结构.采用VSM检测样品磁性,x=0.06,0.08的样品显示为室温顺磁性,x=0.12的样品在刚加外磁场时,饱和磁化强度随磁场强度的变化类似铁磁材料的情形,但与铁磁材料不同的是随着H的增加,M并没有趋于饱和,而是像顺磁材料那样M随H的增加而线性增加.
Mn-doped TiO2 compounds have been fabricated by the solgel technique.XRD results suggest that all samples are anatase structure,there is no complex phase of diffraction peak.The XRD results also indicate a monotonic decrease in the lattice constant with increasing Mn concentration.The decrease may be due to the substitution of Mn ion into the Ti site.Using VSM test sample magnetic,concentration of 0.06,0.08 of the sample appears as a room as gentle as a magnetic,and concentration of 0.12 of samples in the combined with external magnetic field,M with the H is similar to the change of ferromagnetic materials of the case,but unlike the ferromagnetic materials except that it is increased with H,M does not tend to saturation,but like a Paramagnetic material that M with H increase linearly.
出处
《河北师范大学学报(自然科学版)》
CAS
北大核心
2011年第4期365-368,共4页
Journal of Hebei Normal University:Natural Science
基金
河北省自然科学基金(E2010000429)
关键词
TIO2
稀磁半导体
顺磁性
TiO2
diluted magnetic semiconductors
paramagnetic