电子束光刻中的相互邻近效应校正技术研究

A Study of the Mutual Proximity Effect Correction in Electron-Beam Lithograph

本文研究了基于形状修正的电子束光刻分级邻近效应校正技术,在内部邻近效应校正的基础上,在计算图形之间产生的相互邻近效应过程中,采用了局部曝光窗口和全局曝光窗口机制。局部曝光窗口的区域小,对计算精度影响大,采用累积求和的方法进行精确计算;全局曝光窗口区域大,对计算精度影响小,采用大像点近似的方法进行计算,从而更快速地实现邻近效应校正。该技术的应用,满足了校正精度和运算速度两方面的要求。实验结果与模拟结果一致,表明通过采用局部曝光窗口和全局曝光窗口机制,能够快速地实现相互邻近效应校正,在校正精度相同的情况下,有效提高了运算速度。

The proximity effect correction scheme of electron-beam lithograph based on the hierarchical shape modification is studied.According to the internal proximity effect correction,in order to calculate the mutual proximity effect,the local exposure window and the global exposure one are adopted.The smaller the area of the local exposure window is,the greater the impact on the accuracy of result,so the accumulated sum method is used to accurately calculate them.The larger the area of global exposure window is,the less the impact on the accuracy of result,so a large pixel approximation method can be used to calculate,thus proximity effect correction is realized rapidly.It also meets the precision and calculation speed requirements in the electron-beam lithography.The good agreement between the simulation and the lithography experimental results verify the effectiveness of the scheme.With the same precision,the speed of this correction scheme is improved.