摘要
针对准一维硫化镉(CdS)纳米结构的合成及其器件作了相应介绍。硫化镉(CdS)作为一种II-VI族半导体材料,室温禁带宽度为2.42 eV,合成方法多种多样,可根据具体的需求和条件,通过对各种具体参数的调节,合成出需要的CdS纳米结构及高质量的准一维CdS纳米结构制备出高性能器件。虽然准一维CdS纳米结构的合成和器件制备还处在实验阶段,但其独特的光电化学性能,已被广泛应用于光化学电池和储能器件。
This paper discusses quasi one-dimensional cadmium sulfide(CdS) nanostructures synthesis and corresponding devices.Cadmium sulfide(CdS) as a II-VI semiconductor material with band gap at room temperature is 2.42 eV,has a variety of synthesis methods,according to the specific needs and conditions,by adjusting specific parameters of synthesis needs CdS nanostructures and high-quality quasi-one-dimensional CdS nanostructures prepared by high-performance devices.Although the quasi one-dimensional CdS nanostructures synthesis and device fabrication is still in the laboratory stage,their unique optical and chemical properties have been widely used in photochemical battery and energy storage devices.
出处
《电子科技》
2011年第7期144-147,共4页
Electronic Science and Technology