基于准一维CdS纳米结构的合成及应用

Synthesis and Applications of Quasi One-Dimensional(1D) Cds Nanostructures

针对准一维硫化镉(CdS)纳米结构的合成及其器件作了相应介绍。硫化镉(CdS)作为一种II-VI族半导体材料,室温禁带宽度为2.42 eV,合成方法多种多样,可根据具体的需求和条件,通过对各种具体参数的调节,合成出需要的CdS纳米结构及高质量的准一维CdS纳米结构制备出高性能器件。虽然准一维CdS纳米结构的合成和器件制备还处在实验阶段,但其独特的光电化学性能,已被广泛应用于光化学电池和储能器件。

This paper discusses quasi one-dimensional cadmium sulfide（CdS） nanostructures synthesis and corresponding devices.Cadmium sulfide（CdS） as a II-VI semiconductor material with band gap at room temperature is 2.42 eV,has a variety of synthesis methods,according to the specific needs and conditions,by adjusting specific parameters of synthesis needs CdS nanostructures and high-quality quasi-one-dimensional CdS nanostructures prepared by high-performance devices.Although the quasi one-dimensional CdS nanostructures synthesis and device fabrication is still in the laboratory stage,their unique optical and chemical properties have been widely used in photochemical battery and energy storage devices.