扩散硅力敏传感器平面工艺CAD——制作扩散电阻的工艺参数设计

CAD of Si Diffused Force Sensor's Planar Proessing ——Design of Processing Parameters for Fabrication of the Difussed Resistance

扩散硅力敏传感器ＣＡＤ 的技术包括３ 大部分：传感器平面工艺ＣＡＤ；传感器芯片结构ＣＡＤ；传感器结构ＣＡＤ．平面工艺ＣＡＤ 是根据半导体技术的理论，将氧化、注入、退火、再扩、腐蚀、淀积等工艺的物理模型用数学语言建立起数学模型，再利用计算机进行数值计算，使传感器芯片平面工艺流程的实验过程移植到计算机上进行，通过对工艺参数仿真计算，实现了传感器平面工艺的ＣＡＤ技术。制作传感器扩散电阻需要多个平面工艺步骤，每个工艺步骤都需要确定几个工艺参数，而任意一个工艺参数的变化都将对器件的最终特性有影响。因此在设计传感器时，平面工艺的ＣＡＤ技术将起到重要作用。扩散硅力敏传感器平面工艺ＣＡＤ是基于ＩＣＥＣＲＥＭ 软件进行的。

The CAD technology of the Si diffused force sensor contains three parts,CAD of Planar processing,CAD f the chip structure and CAD of the sensor structure.The CAD of planar processing calcalates the values using the computer accordiry to the theory of the semiconductor technology after the establishment of the mathematical model by means of the mathematical language to substitue the physical model of the processing such as oxydation,implantation,anneal,rediffusion,etching,deposition etc.,So that the experimental process of the planar processing of the sensor chip can be implament using the computer.The CAD of sensor's planar processing can be accomplished through the simulative calcalating the processing paramters.The CAD of the planar processing plays an important role in the sensor design.The CAD of the Si difussed force sensor's planar processing is implamented based on ICECREM soft ware.