SILC效应机理及其对Flash Memory的影响
摘要
随着栅氧化层的减薄,应力感应的薄栅氧化层漏电特性目前已经成为MOS器件的主要可靠性因素。本文对SILC效应的导电机制和组成成分作了简要论述,并重点研究了Flash Memory中的SILC效应。
出处
《科技创新导报》
2011年第17期105-107,共3页
Science and Technology Innovation Herald
基金
湖南科技大学博士启动基金项目(E51080)
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