铝膜沉积温度对非晶硅薄膜晶化的影响

Influence of the aluminum depositing temperature on the crystallization process of amorphous silicon

采用磁控溅射(Magnetron Sputtering,MS)方法,研究了不同的退火温度及铝的沉积温度对非晶硅薄膜晶化的影响.通过扫描电子显微镜(SEM)对不同温度沉积的铝薄膜表面结构及形貌进行了分析;并利用光学显微镜,拉曼散射仪(RAMAN)对退火后的薄膜表面形态和结构进行了分析.实验结果表明:适当温度退火可以有效提高对非晶硅的诱导作用,提高铝膜的沉积温度对于非晶硅薄膜晶化有促进作用;在650℃的退火温度下增加铝的沉积温度可显著提高非晶硅的晶化效果.

The affect of different annealing temperature and different aluminum depositing temperature on the crystallization process of amorphous silicon thin film is studied.Using the optical microscope and RAMAN,surface morphology,the structure of the silicon film after annealing are observed.The aluminum film surface structure and morphology at different depositing temperature are studied by scanning electron microscope（SEM）.The results show that the amorphous silicon thin film will crystallize significantly after annealing at applicable temperature.Increasing aluminum depositing temperature may make amorphous silicon film crystallize easily annealed at 650℃.