碳纳米管场效应管尺寸缩小特性的比较

Comparing of the Scaling Property of Carbon Nanotube Field Effect Transistors

由于具有更为显著的量子隧穿效应,碳纳米管场效应管具有较硅基MOS管不同的尺寸缩小特性,同时,由于工作机理的不同,类MOS碳纳米管场效应管(C-CNFETs:Conventional MOS-like Carbon Nanotube Field Effect Transistors)的尺寸缩小特性与隧穿碳纳米管场效应管(T-CNFETs)也不尽相同。器件尺寸缩小特性研究是研究其应用前景的重要方式,而之前对碳纳米管场效应管尺寸缩小特性的研究并没考虑带间隧穿对碳纳米管场效应管尺寸缩小特性的影响。采用非平衡格林函数方法,对比研究了带间隧穿对C-CNFETs与T-CNFETs尺寸缩小特性的影响。研究结果表明两者存在较大差异、甚至截然相反的尺寸缩小特性。有利于为碳纳米管场效应管器件设计提供重要指导,以获取面积、速度、功耗之间的合理折中。

Owing to the more obvious quantum tunneling effect, Carbon Nanotubo Field Effect Transistors （CNFETs） take on different scaling property from that of silicon based Metal-Oxide-Semiconductor （MOS） transistors. The scaling properties of Conventional MOS-like Carbon Nanotube Field Effect Transistors （C-CNFETs）, on the other hand, differ from those of Tunneling Carbon Nanotube Field Effect Transistors （T-CNFETs） due to different operating mechanism. As a result, study on the scaling property is one of the most important means of searching for the application potential of the device. The band-to-band tunneling, however, has not been taken into account in previous researches. A comparative study of the impact of band-to-band tunneling on the scaring property of C-CNFETs and T- CNFETs was carried out based on Non-Equilibrium Green＇s Function method. The research results reveal that these two kinds of CNFErrs take on different or even opposite scaling properties. The research will offer a vigorous guidance for the device design to obtain a proper trade-off among area, speed and power in application.