硼掺杂单壁碳纳米管检测SF_6气体局部放电仿真

Simulation on the B-doped Single-walled Carbon Nanotubes Detecting the Partial Discharge of SF_6

气体绝缘组合电器(GIS)的局部放电检测和SF6气体局放分解组分分析,对GIS运行状态的诊断和评估有着重要的意义。为提高气体分解组分的检测灵敏度,在介绍了碳纳米管传感器检测SF6局放分解气体的原理后,应用材料科学模拟计算软件MS对硼掺杂单壁碳纳米管(B-SWNT)性质进行研究并对其检测SF6局部放电主要分解组分进行量子力学模拟。研究和模拟结果表明:掺杂硼原子可以改变碳纳米的电子结构,使其趋向与P型半导体,能隙变小,导电性增强;B-SWNT与SO2F2发生化学吸附,B-SWNT电子结构变化明显,导电性进一步增强,电阻变化量大,灵敏度高,而对SF6及SF6其它分解气体组分吸附作用较弱,灵敏度不高。预测B-SWNT可以用来检测SF6局放分解混合气体中的SO2F2气体,且灵敏度高于SWNT。

The detection of partial discharge （PD） in Gas insulated switchgear （GIS} and the analysis of the gas decomposition components of SFs are significant for diagnosing and assessing the operation state of GIS. We introduced the principles of detecting the gas decomposition components of SF6 using carbon nanobutes sensors, and simulated the properties of B-doped single-walled carbon nanobutes （B-SWNT） through Materials Studio, a simulation software often used in material science field and the detection of gas decomposition components of SF6. The simulation results show that the electronic structures of carbon nanobutes are changed, tending to P-type semiconductor after the B atom is doped in SWNT. The energy gap decreases and the conductivity increases as well. Chemisorptions occur between B-SWNT and SO2 F2 during which the electronic structures of B-SWNT are changed obviously and the conductivity increases more and more, which leads to a remarkable change in resistance, showing high sensitivity to SO2 F2. However, the adsorptions of 13-SWENT to SF6 as well as other gas decomposition components are weak and the sensitivity is not high. Therefore, it is predicted that B-SWNT can be used to detect SO2 F2 of the gas decomposition components of SF6 in PD and the sensitivity is higher than SWNT.