氧等离子环境下影响多孔硅光学特性的因素

Impacts of anneding and ageing on the porous silicon photoluminescence in oxygen plasma

研究了多孔硅(porous silicon,PS)在氧等离子体环境中退火温度和存储时间对PS光学稳定性的影响。通过光致发光(PL)谱和傅里叶变换红外光谱对系列样品进行分析。高斯拟合结果显示PL谱由三个高斯峰叠加而成,其中至少两个高斯峰是由非量子限制效应造成的,即第一峰面积的变化与Si=O双键密切相关,第三峰面积的变化与Si-O-Si桥键以及SiHx(x=1,2)键有关;退火温度对以上两个峰的强弱变化有直接影响。

Impacts of annealing and ageing on the photoluminescence（PL） spectra and Fourier Transform Infrared Spectrometry of porous silicon（PS） have been investigated.Deconvolution of the PL spectra into three distinct Gaussian bands reveals that at least two of the bands are relevant to the non-quantum confinement mechanisms.Specifically,it is found that the intensity of the first Gaussian band strongly depends on the Si=O bonds as time prolongs.The intensity of the third Gaussian band may be related to Si-O-Si bonds and SiHx（x=1,2） bonds.The changes of the two Gaussian bands are dependent on annealing temperature.