摘要
Based on closed-orbit theory, the influence of an interface modifier on the photodetachment of H^- in an electric field near a metal surface is studied. It is demonstrated that the interface strengthens the oscillations in the photodetachment cross section. However, when the electric field environments are different, the strengthening oscillations are caused by different sources. When the electric field direction is upward, the interface enhances the oscillations by shortening the period and the action of the closed orbit. When the electric field direction is downward, the interface strengthens the oscillations either by extending the coherent energy range or by increasing the total number of the closed orbits. We hope that our results will be conducive to the understanding of the photodetachment process of negative ions near interfaces, cavities and ion traps.
Based on closed-orbit theory, the influence of an interface modifier on the photodetachment of H^- in an electric field near a metal surface is studied. It is demonstrated that the interface strengthens the oscillations in the photodetachment cross section. However, when the electric field environments are different, the strengthening oscillations are caused by different sources. When the electric field direction is upward, the interface enhances the oscillations by shortening the period and the action of the closed orbit. When the electric field direction is downward, the interface strengthens the oscillations either by extending the coherent energy range or by increasing the total number of the closed orbits. We hope that our results will be conducive to the understanding of the photodetachment process of negative ions near interfaces, cavities and ion traps.
基金
Project supported by the National Natural Science Foundation of China (Grant Nos.11074104 and 10604045)
the University Science & Technology Planning Program of Shandong Province of China (Grant No.J09LA02)
the Discipline Construction Fund of Ludong University of China
