摘要
We investigate the band structure of a compressively strained In（Ga）As/In0.53Ga0.47As quantum well （QW） on an InP substrate using the eight-band k.p theory. Aiming at the emission wavelength around 2.33 μm, we discuss the influences of temperature, strain and well width on the band structure and on the emission wavelength of the QW. The wavelength increases with the increase of temperature, strain and well width. Furthermore, we design an InAs /In0.53Ga0.47As QW with a well width of 4.1 nm emitting at 2.33 μm by optimizing the strain and the well width.
We investigate the band structure of a compressively strained In（Ga）As/In0.53Ga0.47As quantum well （QW） on an InP substrate using the eight-band k.p theory. Aiming at the emission wavelength around 2.33 μm, we discuss the influences of temperature, strain and well width on the band structure and on the emission wavelength of the QW. The wavelength increases with the increase of temperature, strain and well width. Furthermore, we design an InAs /In0.53Ga0.47As QW with a well width of 4.1 nm emitting at 2.33 μm by optimizing the strain and the well width.
基金
Project supported by the '100 Talents Program' of Chinese Academy of Sciences,China
