期刊文献+

Growth of gem-grade nitrogen-doped diamond crystals heavily doped with the addition of Ba(N_3)_2 被引量:2

Growth of gem-grade nitrogen-doped diamond crystals heavily doped with the addition of Ba(N_3)_2
下载PDF
导出
摘要 Additive Ba(N3)2 as a source of nitrogen is heavily doped into the graphite-Fe-based alloy system to grow nitrogendoped diamond crystals under a relatively high pressure (about 6.0 GPa) by employing the temperature gradient method. Gem-grade diamond crystal with a size of around 5 mm and a nitrogen concentration of about 1173 ppm is successfully synthesised for the first time under high pressure and high temperature in a China-type cubic anvil highpressure apparatus. The growth habit of diamond crystal under the environment with high degree of nitrogen doping is investigated. It is found that the morphologies of heavily nitrogen-doped diamond crystals are all of octahedral shape dominated by {111} facets. The effects of temperature and duration on nitrogen concentration and form are explored by infrared absorption spectra. The results indicate that nitrogen impurity is present in diamond predominantly in the dispersed form accompanied by aggregated form, and the aggregated nitrogen concentration in diamond increases with temperature and duration. In addition, it is indicated that nitrogen donors are more easily incorporated into growing crystals at higher temperature. Strains in nitrogen-doped diamond crystal are characterized by micro-Raman spectroscopy. Measurement results demonstrate that the undoped diamond crystals exhibit the compressive stress, whereas diamond crystals heavily doped with the addition of Ba(N3)2 display the tensile stress. Additive Ba(N3)2 as a source of nitrogen is heavily doped into the graphite-Fe-based alloy system to grow nitrogendoped diamond crystals under a relatively high pressure (about 6.0 GPa) by employing the temperature gradient method. Gem-grade diamond crystal with a size of around 5 mm and a nitrogen concentration of about 1173 ppm is successfully synthesised for the first time under high pressure and high temperature in a China-type cubic anvil highpressure apparatus. The growth habit of diamond crystal under the environment with high degree of nitrogen doping is investigated. It is found that the morphologies of heavily nitrogen-doped diamond crystals are all of octahedral shape dominated by {111} facets. The effects of temperature and duration on nitrogen concentration and form are explored by infrared absorption spectra. The results indicate that nitrogen impurity is present in diamond predominantly in the dispersed form accompanied by aggregated form, and the aggregated nitrogen concentration in diamond increases with temperature and duration. In addition, it is indicated that nitrogen donors are more easily incorporated into growing crystals at higher temperature. Strains in nitrogen-doped diamond crystal are characterized by micro-Raman spectroscopy. Measurement results demonstrate that the undoped diamond crystals exhibit the compressive stress, whereas diamond crystals heavily doped with the addition of Ba(N3)2 display the tensile stress.
出处 《Chinese Physics B》 SCIE EI CAS CSCD 2011年第7期461-465,共5页 中国物理B(英文版)
基金 Project supported by the National Natural Science Foundation of China (Grant No.50572032)
关键词 temperature gradient method gem-grade nitrogen-doped diamond crystals high temperature and high pressure additive Ba(N3)2 temperature gradient method, gem-grade nitrogen-doped diamond crystals, high temperature and high pressure, additive Ba(N3)2
  • 相关文献

参考文献19

  • 1Woods G S 1984 Phil. Mag. B 50 673.
  • 2Sumiya H, Toda N, Nishibayashi Y and Satoh S 1997 Jour- nal of Crystal Growth 178 485.
  • 3Tian Y, Jia X P, Zang C Y, Li S S, Xiao H Y, Zhang Y F, Huang G F, Li R, Han Q G, Ma L Q, Li Y, Chen X Z, Zhang C and Ma H A 2009 Chin. Sci. Bull. 9 1459.
  • 4Yu R Z, Ma H A, Liang Z Z, Liu W Q, Zheng Y J and Jia X 2008 Diamond Relat Mater. 17 180.
  • 5Huang G F, Jia X P, Li S S, Hu M H, Li Y, Zhao M, Yan B M and Ma H A 2010 Sci. Chin. Ser. G 10 1831.
  • 6Huang G F, Jia X P, Li S S, Zhang Y F, Li Y, Zhao M and Ma H A 2010 Chin. Phys. B 19 118101.
  • 7Ma H A, Jia X P, Chen L X, Zhu P W, Guo W L, Guo X B, Wang Y D, Li S Q, Zou G T, Zhang G and Bex P 2002 J. Phys. Condens. Matter 14 11269.
  • 8Zang C Y, Jia X P, Ma H A, Li S S, Tian Y and Xiao H Y 2006 Chin. Phys. Lett. 1 214.
  • 9Zhou L, Jia X P, Ma H A, Zheng Y J and Li Y T 2008 Chin. Phys. B 17 4665.
  • 10Palyanov Y N, Borzdov Y M, Khokhryakov A F, Kupriyanov I N, and Sokol A G 2010 Crystal Growth and Design 10 3169.

同被引文献13

引证文献2

二级引证文献2

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部