Analytical-Numerical Model for the Transconductance of Microwave AIGaN/GaN High Electron Mobility Transistors
Analytical-Numerical Model for the Transconductance of Microwave AIGaN/GaN High Electron Mobility Transistors
出处
《材料科学与工程（中英文B版）》
2011年第1期121-129,共9页
Journal of Materials Science and Engineering B
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1Rajab Yahyazadeh Zahra Hashempour.Analytical-Numerical Model for the Cut off Frequency of AIGaNIGaN High Electron Mobility Transistors[J].材料科学与工程（中英文B版）,2011,1(2):190-199.
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9Yuan Shiwen Jing Jun (Yanshan University, Qinhuangdao 066004, China)Yutaka Fukui(Tottori University, Koyama, Tottori, 680 Japan).THE DESIGN OF ACTIVE CURRENT-MODE FILTER WITH STATE VARIABLE METHOD[J].Journal of Electronics(China),2000,17(4):376-381.
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10Yang Peifeng Li Jingchun Yu Qi Wang Xiangzhan Yang Mohua (Dept. of Microelectronic Science and Eng., UEST of China, Chengdu 610054)He Lin Li Kaicheng Tan KaizhouLiu Daoguang Zhang Jing Yi Qiang Fan Zerui(National Key Laboratory of Analog IC’s, Chongqing 400060).DESIGN AND FABRICATION OF Si/SiGe PMOSFETs[J].Journal of Electronics(China),2002,19(1):108-112. 被引量：1
