摘要
采用直流脉冲磁控溅射方法在非晶硅薄膜上制备AZO背反电极,比较不同制备参数对透过率及效率的影响。采用优化参数,得到效率增加了0.8%的非晶硅薄膜电池。根据实验结果,证明背反电极增反机理不是薄膜干涉增强原理,而是因为界面共振吸收减少,而导致光的吸收增强的机理。
The AZO back reflector was prepared by DC pulse magnetron sputtering method, by comparing with different fabrication parameters to find the influence to transmittance and conversion efficiency. With optimized parameters, the efficiency of the amorphous silicon solar cell increased by 0.8 %. The back reflector mechanism is proved not to be the film interference theory but the interface resonance absorption, in which the light absorption is enhanced when the back reflector is applied.
出处
《广东石油化工学院学报》
2011年第4期28-30,共3页
Journal of Guangdong University of Petrochemical Technology
关键词
铝掺杂氧化锌
脉冲直流
薄膜太阳能电池
AZO
DC pulse magnetron sputtering
amorphous silicon thin film solar cell
