应用光伏方法测定P型半导体表面性质

Measure Surface Quality of P Type Semiconductors by Photovoltaic Method

本文报道了应用变温光伏方法对半导体表面能级,表面态密度的非破坏性测量原理。通过一定的模型简化,将Shockly-Read体复合理论应用于表面,建立起P型半导体表面态对少子电子的俘获截面估算公式。并以P型Si单晶样品进行验证,所得结果同有关报道一致。

The measured undestructivly theory for the surface energy level and the surface state density of semiconductors fay the method of photovoltages at changed temperatures is reported. The Shockly-Read bulk recombination theory is applied to surface, thereby a formula mated cross section to trap electron for the surface state of P type semiconductors is established, in terms of certain reducing model. The theory is also verifed with the specimens type Si single crystal. The results consist with the reports of related literature.