摘要
主要介绍了ITO薄膜的制备工艺和掺杂优化工艺,例举了两种气敏机理的推论以及掺杂优化的机理。指出今后ITO气敏材料的气敏机理将成为研究重点,新形态ITO材料的研发将成为主要发展方向。
The preparation and doping technology of ITO thin films are reviewed, two inferences of the sensitive mechanism of ITO and the mechanism of doping technology are enumerated. Finally it is pointed out that the sensi- tive mechanism of ITO will be the research focus, and the main direction of development will be the new form of ITO.
基金
云南省自然科学基金(2008E028M)
关键词
ITO气敏材料制备工艺掺杂优化气敏机理掺杂机理新形态
ITO, gas sensitive materials, preparation technology, doping technology, sensitive mechanism,doping mechanism, new form
