直流磁控溅射法制备高品质钛铝共掺杂氧化锌透明导电薄膜

Growth and Properties of Transparent Conducting TAZO Films by DC Magnetron Sputtering

利用直流磁控溅射法在室温水冷玻璃衬底上成功制备出高品质的钛铝共掺杂氧化锌(TAZO)透明导电薄膜。XRD研究结果表明,TAZO薄膜为具有c轴择优取向的六角纤锌矿结构的多晶薄膜,偏压为-20V时制备的厚度为365nm的薄膜的方块电阻为10.15Ω/□,最小电阻率为3.70×10^(-4)Ω·cm,所有薄膜样品在500～800nm的可见光平均透过率都超过了92%。

Transparent conducting Ti, A1 co-doped ZnO thin films with high transparency and relatively 10w resistivity have been successfully prepared by DC magnetron sputtering. SEM and XRD studies revealed that all the films are polycrystalline with a hexagonal structure and a preferred orientation along the c-axis. The lowest resistivity is 3. 70 ×10^-4Ω·cm when the bias-voltage is -20V. All the films present a high transmittance of above 92 % in the visible range.