DLTS技术研究富氮SiO_xN_y薄介质膜的电学特性

Study on the Electronic Characteristics of Nitrogen Rich SiO_xN _y Thin Dielectric Film With DLTS Technique

采用深能级瞬态谱技术 （ＤＬＴＳ）， 测试了等离子体增强化学汽相淀积 （ＰＥＣＶＤ） 法低温制备的富氮的ＳｉＯｘＮｙ 栅介质膜的电学特性（界面态密度、俘获截面随禁带中能量的变化关系），结果表明，采用合适的ＰＥＣＶＤ低温工艺淀积ＳｉＯｘＮｙ

Electrical characteristics of nitrogen rich SiO x N y film produced by plasma enhanced chemical vapor deposition(PECVD)were tested by DLTS experiment.These include interface state density,capture cross section of interface state.It is found that thin gate medium film with better electrical characteristics can be achieved by depositing SiO x N y film with appropriate PECVD low temparaure technology.