硅片直接键合的微观动力学研究

Study on the Micro-Kinetics of Silicon Wafer Direct Bonding

基于直接键合硅片表面能与退火温度的关系曲线， 定量讨论了键合时键合界面上的微观动力学变化过程。首次提出五阶段键合模型计算值与实测表面能曲线相一致，初步确定了键合过程中界面发生的微观反应机理。

Based on the surface energy curves with respect different annealing temperatures,the SDBS kinetic model has been developed in the paper.The successful bonding process flow divides into five stages with temperature increasing.Surface energy value calculated based on the model is in agreement with the experimental results.