摘要
通过激光脉冲沉积法(PLD)在Si衬底上沉积了双钙钛矿结构La2NiMnO6(LNMO)薄膜。用HP4284A LCR仪等分析测试手段研究了薄膜异质结的电流-电压特性和电容-电压特性。结果表明La2NiMnO6/Si异质结也表现出了与传统相似的p-n整流特性。
La2NiMnO6 thin films were prepared by pulsed laser deposition （PLD） on the Si （100） substrate. The characteristics of the current - voltage （ I - V） and the capacitance- voltage （ C - V） of the La2NiMnO6 thin films heterostructure were analyzed by HP4284A LCR meter and other instruments. The results showed that the La2NiMn06/Si heterojunction had typical rectification characteristics just like the traditional p -n junction.
出处
《化工时刊》
CAS
2011年第7期23-26,共4页
Chemical Industry Times
关键词
双钙钛矿
异质结
微结构
double perovskite heterojunction microstructure
