不同助熔剂体系下Ga_3PO_7单晶的生长与表征(英文)

Growth and Characterization of Ga_3PO_7 Single Crystals in Different Flux Systems

在X2CO3–MoO3(X=Li,K)助熔剂体系下,采用顶部籽晶缓冷法生长出厘米级磷酸三镓(Ga3PO7)晶体。实验结果表明:X2CO3–MoO3助熔剂适合Ga3PO7单晶的生长。通过测量Ga3PO7单晶的紫外–近红外光谱和中红外光谱研究了其基本光学性能。在K2CO3–MoO3助熔剂体系下,生长的Ga3PO7晶体(101)晶面的透过率达到89%。热学性能测试表明:Ga3PO7晶体具有高的温度稳定性(在K2CO3–MoO3助熔剂体系下高达1 621.15 K),Ga3PO7晶体的导热性良好,且各向异性不明显,有利于其应用。从Li2CO3–MoO3和K2CO3–MoO3两种助熔剂体系中生长的Ga3PO7晶体,其基本性能无明显区别。

Trigallium phosphorus heptoxide（Ga3PO7） crystals were grown by a top-seeded solution-growth slow cooling method with X2CO3–MoO3 fluxes where X = Li,K.The results reveal that the X2CO3–MoO3 fluxes are suitable for the growth of single crystal Ga3PO7.The optical properties of the as-grown Ga3PO7 crystals were analyzed via the measurement of the Ultraviolet-visible-near infrared spectra and middle infrared spectra.The transmittance of（101） wafer of Ga3PO7 crystal grown in K2CO3–MoO3 flux was up to 89%.It is indicated that Ga3PO7 possesses a superior thermal conductivity.The anisotropy of thermal diffusion or thermal conduc-tivity was not obvious.The differential scanning calorimetry analysis and thermogravimetric analysis indicate that Ga3PO7 has a greater temperature stability（up to 1 621.15 K in K2CO3–MoO3 flux）.There was no distinct difference between the properties of the crystals obtained with Li2CO3–MoO3 and K2CO3–MoO3 fluxes.