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Ⅲ-Ⅴ族三结抗辐照太阳电池结构的改进初探 被引量：1

Probe into Structure Improvement of Radiation-resistance Triple-junction Solar Cells
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摘要 文章介绍了Ⅲ-Ⅴ族叠层太阳电池抗辐照设计的基本思路,提出了Ⅲ-Ⅴ族叠层抗辐照太阳电池的两种改进结构p-i-n结构和线性掺杂结构,并探讨分析了这两种结构的物理原理和在抗辐照性能上的优劣,为进一步改善其抗辐射效应作了颇有意义的基础工作。 The paper introduces the ideas in the design of radiation-resistance GaInP2/InGaAs/Ge triple-junction solar cells,presents two improved structures of InGaAs middle cell,i.e.p-i-n and linear variable doping,and analyzes the advantages and disadvantages respectively in terms of physical principle and radiation-resistance mechanism.
作者 石易立
机构地区 南通航运职业技术学院机电系
出处 《南通航运职业技术学院学报》 2011年第2期58-62,共5页 Journal of Nantong Vocational & Technical Shipping College
关键词 砷化镓 抗辐照设计 P-I-N 线性掺杂 GaAs Design of radiation-resistance p-i-n Linear variable doping
分类号 TM914.4 [电气工程—电力电子与电力传动]
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南通航运职业技术学院学报
2011年 第2期

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