面向硅片清洗技术的高浓度臭氧产生装置

High Concentration Ozone Generator Being geared to the Needs of Cleaning Technology for Silicon Wafer

近来特大规模集成电路研发与生产的快速进展,硅片表面清洗至关重要。因此大连海事大学环境工程研究所采用强电离放电方法(折合电场强度达到380 Td,电子具有平均能量达到9 eV)研发成功国内首台具有知识产权dhO3g型系列高浓度臭氧产生器,其臭氧浓度达到240 mg/L。该装置具有自动化水平高,能耗低、体积小、高性价比等特点,并阐述了该装置的技术先进性及其技术指标。

With the rapid development of research,development,and manufacture on super-large scale integration,Silicon wafer surface cleaning is very important.Therefore Dalian Maritime University Environment Engineering Institute use strong ionization discharge method（equivalent to 380Td,electronic electric field intensity with average energy 9eV） successfully developed the first domestic sets dhO3g type series of high concentration ozone generator with intellectual propert.The ozone concentrations reach 240mg/L.This device has the high automation level,low energy consumption,small volume,cost-effective,and expounds the characteristics of the apparatus technology advanced and technical indexes.