溶胶-凝胶法制备二氧化硅膜及其无显影气相光刻

Application of development free vapor photolithography in etching sol gel derived silica films

为使无显影气相光刻应用于非硅衬底材料的刻蚀，扩宽其应用范围，研究了无显影气相光刻在溶胶 凝胶法制备的二氧化硅膜中的应用。通过对溶胶 凝胶化学过程的分析，考察了凝胶二氧化硅薄膜制备过程中的几个重要工艺参数，制备了结构均匀的二氧化硅薄膜。并将无显影气相光刻的方法应用于这种二氧化硅膜的刻蚀，通过优化后的光刻工艺参数得到了反差明显的光刻图形。

Development free vapor photolithography (DFVP) is a new kind of dry etching photolithographic technique. In order to develop the application of DFVP on silicon substrate, sol gel method were used to preparing the sol gel derived silica film on non silicone substrate at normal temperature and normal pressure. The uniform sol gel derived silicon dioxide film was prepared under optimal conditions. DFVP was applied to etch this film. The photolithography patterns was obtained due to the different etching rates of exposure and un exposure areas under the optimized parameters of DFVP process.