摘要
The evolution of inter-device leakage generation technologies is studied with an N-type current with total ionizing dose in transistors in 180 nm poly-gate field device （PFD） that uses the shallow trench isolation as an effective gate oxide. The overall radiation response of these structures is determined by the trapped charge in the oxide. The impacts of different bias conditions during irradiation on the inter-device leakage current are studied for the first time in this work, which demonstrates that the worst condition is the same as traditional NMOS transistors. Moreover simulation is used to understand the bias dependence the two-dimensional technology computer-aided design
The evolution of inter-device leakage generation technologies is studied with an N-type current with total ionizing dose in transistors in 180 nm poly-gate field device （PFD） that uses the shallow trench isolation as an effective gate oxide. The overall radiation response of these structures is determined by the trapped charge in the oxide. The impacts of different bias conditions during irradiation on the inter-device leakage current are studied for the first time in this work, which demonstrates that the worst condition is the same as traditional NMOS transistors. Moreover simulation is used to understand the bias dependence the two-dimensional technology computer-aided design
