摘要
本文采用考虑空间电荷影响的空间电场计算程序，对场致发射体进行模拟计算；初步研究了发射体的几何形状尺寸与其发射特性之间的联系。通过计算分析，可以认为发射体的尖端曲率半径及栅极的开口直径是影响发射体发射特性的最主要的因素。合肥国家同步辐射实验室的ＬＩＧＡ 深度光刻技术，能给出一个可行的几何结构。计算表明点阵密度为１０７／ｃｍ ２ 的直径为６ ｍ ｍ 的硅发射体发射阵列，在８０ Ｖ 的栅极电压下可以取得１０ Ａ
A program to calculate the space field with the effect of space charge is used in this article to proceed an actual analysis to the field emitter,and to show the relation between emission character and the field emitter s geometry sturcture.With the calculation result of field emitter with different geometry sturcture.With the calculation result of field emitter with differentgeometry structure,it is concluded that the curve radius of emitter tip and gate hole are the two most important factors.With the supports of LIGA in NSRL,some suitable structure are disigned.The calculating results show that by applying a 6 mm diameter Si emitter array with the density of 10 7 tip/cm 2,an emission current of more than 10 A can he achieved at the gate voltage below 100 V.
出处
《真空电子技术》
1999年第6期1-7,共7页
Vacuum Electronics
关键词
场致发射
阴极
阵列结构
field emission
Geometry structure
Calculation
