衬底负偏压热灯丝CVD金刚石薄膜在锥体上核化的研究

Studies of the Silicon Cones of Diamond Films by Biased Hot Filament Chemical Vapor Deposition

以ＣＨ４ 和Ｈ２ 为反应混合气体，用衬底负偏压热灯丝ＣＶＤ法在Ｓｉ（１００）面上制备金刚石膜，使用扫描电子显微镜（ＳＥＭ）、Ｒａｍ ａｎ 谱和Ｘ射线光电子能谱（ＸＰＳ）对在硅尖上的金刚石核化进行了研究，并着重讨论了沉积在硅尖上的金刚石颗粒的生长机理。

Diamond films are deposited on Silicon (100) substrate by bias enhanced hot filament chemical vapor deposition from a gas mixture of methane and hydrogen. The nucleation of diamond on the silicon cones was studied by scanning electron microscopy, Raman spectroscopy and X ray photoelectron spectroscopy. It has emphatically discussed the growth mechanism of diamond deposited on the silicon cones.