摘要
在分析碱性Cu化学机械抛光液作用机理的基础上,考察了抛光液对铜晶圆电化学、表面形态、化学机械抛光去除速率等性能。结果发现:选用新研制的络合剂R(NH2)n,将Cu的氧化物、氢氧化物转化为可溶性络合Cu,实现了碱性抛光液中Cu的去除。同时发现,随着碱性抛光液质量分数的增加,淀积Cu层不仅易被腐蚀,腐蚀速率也有所增加,并且当抛光液质量分数达到63.7%(Cu3),会对Cu的腐蚀起到抑制作用。抛光后表面形态分析说明此碱性化学机械抛光液能有效改善晶圆表面粗糙度,且对Cu层平均去除速率是酸性商用抛光液的4～5倍。
Based on the reaction mechanism analysis of deposited Cu in alkaline slurry in chemical mechanical polishing（CMP）,the performance of Cu electrochemical,removal rate,and surface condition were discussed.The results indicate that oxides and hydrogen oxides of Cu can be easily dissolved by the alkaline slurry with a complexing agent of R（NH2）n.And Cu layer can be easily removed.Furthermore,As the increase of alkaline slurry mass fraction,deposited Cu is easy to be eroded by slurry,and also the erosion rate increased.But when slurry mass fraction higher than 63.7%（Cu3）,the erosion is restrained.It is also obtained that the removal rate in alkaline slurry was 4-5 times than that of acidic slurry.Furthermore,an obviously improved deposited Cu surface is obtained.
出处
《半导体技术》
CAS
CSCD
北大核心
2011年第8期582-585,共4页
Semiconductor Technology
基金
国家中长期发展规划重大科技专项02专项项目"极大规模集成电路平坦化工艺与材料"(2009ZX02308)
关键词
抛光液
铜
化学机械抛光
去除速率
表面形态
slurry
copper
chemical mechanical polishing（CMP）
removal rate
surface features
