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基于GaAs STATZ模型的RF MOSFET DC建模技术 被引量：2

RF MOSFET DC Modeling Technique Based on GaAs STATZ Model
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摘要 STATZ模型是表征GaAsMESFET特性的常用模型,具有表达式简洁、参数少的优点。通过尝试将STATZ模型用于表征射频MOSFET的直流特性,提取并在ADS软件中优化了STATZ直流模型的参数。为了提高仿真精度,模型必须考虑晶体管漏极与源极的寄生电阻,根据MOSFET处于强反型区且漏-源电压为零时的等效电路模型提取了晶体管的漏极和源极的寄生电阻。在ADS软件中利用STATZ模型对MOSFET的直流特性进行了仿真,测量的MOSFET直流曲线与仿真曲线一致性很好,验证了模型的良好的精确度,证明了GaAs STATZ模型可以用于表征射频MOSFET的直流特性。晶体管采用中芯国际的0.13μm RF CMOS工艺制作。 The STATZ model is a popular model which characterizes the GaAs MESFET.The advantages of STATZ model are concise,few parameters expression.The RF MOSFET DC behavior was characterized based on GaAs STATZ model.The parameters of STATZ model were extracted and optimized in ADS.The drain and source resistances were considered to improve the simulation accuracy.The drain and source resistance were extracted based on the equivalent circuit model of the MOSFET in the strong inversion region and Vds=0.The MOSFET DC characteristics were modeling based on GaAs STATZ model in ADS.Good agreement was obtained between the simulated and measured results.The result of experiment validates the feasibility that GaAs STATZ model is applied to model MOSFET DC characteristics.The transistors are fabricated with SMIC 0.13 μm RF CMOS process.
作者 程加力 韩波 李寿林 翟国华 高建军
机构地区 华东师范大学信息科学技术学院 淮海工学院电子工程学院 复旦大学ASIC国家重点实验室
出处 《半导体技术》 CAS CSCD 北大核心 2011年第8期591-594,603,共5页 Semiconductor Technology
基金 华东师范大学2010年优秀博士生培养基金项目(2010039)
关键词 等效电路模型 参数提取 射频MOSFET GAAS STATZ模型 直流模型 quivalent circuit model parameter extraction RF MOSFET GaAs STATZ model DC model
分类号 TN386 [电子电信—物理电子学]
  • 相关文献

参考文献7

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共引文献1

同被引文献19

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引证文献2

二级引证文献6

半导体技术
2011年 第8期

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