锗硅器件高频噪声的去嵌算法研究

Research on De-Embedding Method of High Frequency Noise for SiGe Device

提出了一种"开路-直通"的级联结构的二端口网络的晶体管高频噪声去嵌结构以及与此相关的基于噪声相关性矩阵的去嵌方法。和传统的需要配备两个"直通"结构的方法相比较,该结构及方法在版图配合的基础上,只需要使用一个"开路"结构和一个"直通"结构,而且多个不同尺寸的被测试器件结构可以共用一个直通去嵌测试结构进行测试及去嵌,结果显示,使用该方法测试及去嵌后的精度几乎不受影响。该方法的意义在于能极大地减少硅片上直通去嵌测试结构的数量从而节省硅片面积;同时,又减少了测试时间、提高了测试效率,极大地降低了成本。

A new ＇open-thru＇ high frequency noise de-embedding structure of a cascade two-port network and the related method based on the noise correlation matrix were presented.Comparing with the traditional method which need two ＇thru＇ structures,this new method need only one ＇thru＇ structure with the assistance of the layout,further more,the devices under test with various sizes can use the same designed ＇thru＇ structure for testing and de-embedding.The result shows that by using this method the precision is almost not impacted after testing and de-embedding.The significance is that it can greatly decrease the amount of the ＇thru＇ structure and save the wafer area,meantime,it decreases the measurement time,improves the measurement efficiency and saves the cost.