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硅微波功率DMOSFET发展现状 被引量:5

Development of Si Microwave Power DMOSFET
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摘要 简要地评述了硅微波功率DMOSFET (LDMOS, VDMOS) 的发展概况, 叙述了硅微波功率DMOS的基本结构和一些重要的制造技术。对微波功率DMOS的性能、特点与BJT进行了比较, 并对其应用、发展方向及前景进行了探讨。 This paper briefly reviews the development of Si microwave power DMOS FET(LDMOS,VDMOS).The basic structures and some important fabrication technology of Si microwave power DMOS are introduced.The performance and characteristics of microwave power DMOSFETs are compared with BJT.The applications and future development tendency are discussed.
作者 刘英坤
机构地区 电子十三所
出处 《半导体情报》 1999年第6期6-11,26,共7页 Semiconductor Information
关键词 微波 DMOSFET 场效应器件 Microwave Power Si
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同被引文献31

  • 1姚丰,何杞鑫,方邵华.一种新型低压功率MOSFET结构分析[J].半导体技术,2005,30(11):53-56. 被引量:6
  • 2蔡丽霞,张健亮,陈铭,周明江.RF功率MOSFET产品及其工艺开发[J].电子设计应用,2007(2):60-61. 被引量:1
  • 3谭浩强.C程序设计[M]4版.北京:清华大学出版社,2010.
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  • 7IN' T ZANDT M A A,HIJZEN E A,HUETING R J E,et al.Record-low 4 mΩ·mm^2 specific on-resistance for 20 V Trench MOSFETS[C]//ISPSD.Cambridge,UK,2003:32-35.
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