摘要
综述了近年来ＳｉＧｅ体单晶在材料特性、生长方法及应用方面的研究进展，
The recent research development of SiGe bulk single crystal in material pro perties,growth methods and application is reviewed in this paper,and the prospect of this material is forecasted.
出处
《半导体情报》
1999年第6期27-30,共4页
Semiconductor Information
关键词
体单晶
生长
锗化硅
半导体材料
SiGe Bulk single crystal Growth methods Application
