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外场取向对铁磁/反铁磁双层膜交换偏置的影响 被引量:2

Influence of orientation angle of external field on the exchange bias of ferromagnetic/antiferromagnetic bilayer films
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摘要 利用斯通纳-沃尔法斯(Stoner-Wohlfarth,SW)模型详细讨论了铁磁/反铁磁双层膜交换偏置对外场取向角的依赖关系。解析推导出转换场和矫顽力的表达式。用两种办法计算了交换偏置场(he)和磁滞回线的半宽度(HWHL),结果分别用(he)s、(HWHL)s和(he)c、(HWHL)c表示。计算表明,(he)s、(HWHL)s和(he)c、(HWHL)c有很大区别,而只有(he)s和(HWHL)s显示出明显的阶跃现象。我们的结果还说明,转换角方程的奇点是阶跃现象的根源。另外,能量曲线的局域极小不是阶跃现象产生的必要条件。 The angular dependence of exchange bias for ferromagnetic/antiferromaguetic bilayers has been investigated in detail with the help of the Stoner-Wohlfarth model. The equations for determining the switching field and the expressions of coercivity were obtained analytically. We present two approaches to calculate the exchange bias field (he) and the half width of the hysteresis loop (HWHL), and distinct the results as (he)s, (HWHL)s and (he)c, (HWHL)c, respectively. The results indicated that only (he)s and (HWHL)s show obvious jump phenomenon. And it was found that, the singularity in the equation to determine the switching angle, i.e., the critical angle at which the magnetization flips, is the origin of the jump phenomenon. It was also indicated that the local minimum of the energy landscape is not a necessary condition for occurring of jump phenomenon.
出处 《磁性材料及器件》 CAS CSCD 北大核心 2011年第4期14-18,共5页 Journal of Magnetic Materials and Devices
基金 国家自然科学基金资助项目(10765003) 广东省高等学校引进人才专项资金资助项目
关键词 铁磁/反铁磁双层膜 斯通纳-沃尔法斯模型 交换偏置 转换场 矫顽力 ferromagnetic/antiferromagnetic bilayer film Stoner-Wohlfarth model exchange bias switching field coercivity
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  • 1于广华,柴春林,朱逢吾,赖武彦.Interface chemical states of NiO/NiFe films and their effects on magnetic properties[J].Science China(Technological Sciences),2002,45(1):27-34. 被引量:2
  • 2Spenato D,Castel V,Pogossian S P, et al.Asymmetric magnetization reversal behavior in exchange-biased NiFe/MnPt bilayers in two dif- ferent anisotropy regimes: Close and far from critical thickness. Applied Physics Letters . 2007
  • 3Zhou S M,,Li H Y,Yuan S J, et al.Ecvhange bias in ferromagnetic/ antiferromagnetic bilayers. Prog Phys . 2003
  • 4Meiklejohn WH,Bean CP.New Magnetic Anisotropy. Physical Review . 1956
  • 5Meiklejohn WH,Bean CP.New magnetic anisotropy. Physical Review . 1957
  • 6Dieny B.Giant magnetoresistance in spin-valve multilayers. Journal of Magnetism and Magnetic Materials . 1994
  • 7Mauri D,Siegmann HC,Bagus PS,et al.Simple model for thin ferromagnetic films exchange coupled to an antiferromngnetic substrate. Journal of Applied Physics . 1987
  • 8Malozemoff AP.Random-Field Model of Exchange Anisotropy at Rough Ferromagnetic-Antiferromagnetic Interface. Physical Review B: Condensed Matter and Materials Physics . 1987
  • 9Koon N C.Calculations of exchange bias in thin films with ferromagnetic/antiferromagnetic interface. Physical Review . 1997
  • 10Schulthess TC,Butler WH.Consequences of spin-flop coupling in exchange biased films. Physical Review . 1998

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  • 1BAI YuHao1 & YUN GuoHong1,2 1 College of Physical Science and Technology,Inner Mongolia University,Hohhot 010021,China,2 Key Laboratory of Physics and Chemistry of Functional Materials,College of Physics and Electronic Information,Inner Mongolia Normal University,Hohhot 010022,China.Exchange bias for ferromagnetic/antiferromagnetic bilayers with the uniaxial anisotropy being misaligned with the exchange anisotropy[J].Science China(Physics,Mechanics & Astronomy),2009,52(12):1885-1892. 被引量:5
  • 2潘靖,陶永春,胡经国.外应力场下铁磁/反铁磁双层膜系统中的交换偏置[J].物理学报,2006,55(6):3032-3037. 被引量:16
  • 3陈长春,刘江锋,余本海,戴启润,刘志弘.纳米CMOS电路的应变Si衬底制备技术[J].微纳电子技术,2006,43(7):309-318. 被引量:2
  • 4Zeches R J, Rossell M D, Zhang J X, et al. A strain-driven morphotropic phase boundary in BiFeO3 [J] Science, 2009, 326: 977-980.
  • 5Liu Y K, Yao Y P, Dong S N, et al. Effect of magnetic field on ferroelectric properties of BiFeO3/La5/sCa3/8 MnO3 epitaxial heterostructures[J]. Phys Rev B, 2012, 86 075113-(I-7).
  • 6Ren W, Yang Y R, Di6guez O, et al. Ferroelectric domains in multiferroic BiFeO3 films under ~pitaxial strains[J]. Phys Rev Lett, 2013, 110: 187601-(1-5).
  • 7Wang J, Neaton J B, Zheng H, et al. Epitaxial BiFeO3 multiferroic thin film heterostructures[J]. Science, 2003, 299: 1719-1722.
  • 8Bai F M, Wang J L, Wuttig M, et al. Destruction of spin cycloid in (111)-oriented BiFeOs thin films by epitaxial constraint: Enhanced polarization and release of latent magnetization[J]. Appl Phys Lett, 2005, 86: 032511-(1-4).
  • 9Liu J, Deng H M, Cao H Y, et al. Influence of rare-earth elements doping on structure and optical properties of BiFeO3 thin film fabricated by pulsed laser deposition[J]. Appl Surf Sei, 2014, 307: 543-547.
  • 10Wang Y, Wang J. Modulated charged defects and conduction behaviour in doped BiFeO3 thin films[J]. J Phys D: Appl Phys, 2009, 42: 162001-(1-5).

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