掺杂硅基氧化薄膜光致发光特性研究

STUDY OF PHOTOLUMINESCENCE PROPERTIES IN IMPURITY-DOPED Si-BASED OXIDIC FILMS

测量了用离子注入方法Ｓｉ＋ →ＳｉＯ２ ，Ｃ＋ →ＳｉＯ２ ，ＳｉＯ２ ：Ｌａ 和ＳｉＯ２ ：Ｅｒ 样品室温下的光致发光（ＰＬ） 谱和相应的光致发光激发（ＰＬＥ） 谱，结果表明它们均具有蓝、紫发光峰，且发光稳定。在一定范围内发光效率随掺杂浓度的增加而增大。对样品的发光机理作了初步探讨。

The Photoluminescence (PL) spectra and the photoluminescence excitation (PLE) spectra at room temperature for the samples Si +→SiO 2,C +→SiO 2,SiO 2:La and SiO 2:Er prepared by ion implantation are measured.The results show that all the samples possess blue-violet photoluminescence properties under the ultraviolet light excitation and its light emission is stable.The light emission is more intense,when the impurity-doped concentration is greater within a certain limits.The photoluminescence mechanism for our samples is also discussed.