SiC埋层的红外吸收特性研究

Study of Infrared Absorption Properties of Buried SiC Layers

在较低衬底温度下，用离子合成技术对单晶Ｓｉ 衬底进行高能Ｃ＋ 离子注入，可获得含有ＳｉＣ 的埋层，经高温退火形成βＳｉＣ 颗粒沉淀．通过傅里叶红外吸收谱（ＦＴＩＲ） 对其研究分析，表明埋层中αＳｉ 和βＳｉ 共存，且有一含量最高区．

In the lower temperature, buried SiC layers were gotten with C + ions implanted into Si substrates. Annealing in the high temperature, there would find β SiC in the buried layer. With the Fourier transform infrared(FTIR) analyses, we found both α SiC and β SiC in the layer.