Te-Bi-Se稀散元素化合物半导体制冷材料的合成及应用研究

Synthesis and Application of Te Bi Se Semiconductor Cooling Materials

用陶瓷工艺方法合成Ｔｅ－ Ｂｉ－ Ｓｅ 化合物多晶陶瓷半导体材料，用激光法测得热导率为１０ｍ Ｗｃｍ·Ｋ，用四探针法测得材料电导率为９００ ～１０００Ω－ １ｃｍ － １ ；热电法测得材料的温差电动势率达到１８８ ～２００μＶＫ，优质系数Ｚｐ ，Ｚｎ 达到３ ．５ ×１０ －３Ｋ．用此化合物材料加工制作的１７ 、１２７ 对热电臂的制冷堆，其最大温差达到６５Ｋ，温差为３０Ｋ 时，制冷系数为０ ．５ ．用１７ 对热电臂的制冷堆组装的皮肤温度感觉检测仪制冷最低温可达－ １０ ℃，加热最高可达７０ ℃，数字显示温度，可以满足临床量化检测要求．

In this paper. Te-Bi-Se-Bi-Te system materials were synthesised by sintering method of ceramic technology, which were polycrystal. 1.Properties of materials were: σ=900～1000Ω -1 cm -1 λ=10mw/cm·K α=188～200V/K Z=3.5×10 -3 /K 2.Performance of cooling modules were: 17 Couples: ΔTmax=65K; ε=0.5 When ΔT=30K 127 Couples: ΔTmax=65K; ε=0.5 When ΔT=30K 3.Performance of Thermal-sense detector the lowest Temperature of cooling: Tl=-10℃ the highest Temperature of heating Th=70℃