一种氮化硅薄膜生长工艺的改进方法

A growth process modified method for the thin flim of Si 3 N 4

文章针对氮化硅生长过程中现有生产工艺容易导致膜间厚度差不均和产品质量差的问题,通过分析各种影响因素(工艺原理、生产设备、淀积温度等)对产品成品率的影响,设计了一种对现有设备工艺参数的调整方法。实践验证,该方法能够得到最佳的工艺制备条件,从而获得性能优良的氮化硅薄膜材料。

According to the problems that the existing process can cause uneventhickness of membraneand bad quality of products.This paper introduces the study on the factors related to the deposition process of Si 3 N 4,process mechanism,equipment parameters,deposi-tion temperature.A growth process modified method for the thin flim of Si 3 N 4 is proposed.The experiment results show that,for some special products,by adjustingthe processparameters,a better surface morphology and excellent film quality have been obtained.