摘要
A low temperature drift curvature-compensated complementary metal oxide semiconductor (CMOS) bandgap ref-erence is proposed.A dual-differential-pair amplifier was employed to add compensation with a high-order term of TlnT (T is the thermodynamic temperature) to the traditional 1st-order compensated bandgap.To reduce the offset of the amplifier and noise of the bandgap reference,input differential metal oxide semiconductor field-effect transistors (MOSFETs) of large size were used in the amplifier and to keep a low quiescent current,these MOSFETs all work in weak inversion.The voltage reference's temperature curvature has been further corrected by trimming a switched resistor network.The circuit delivers an output voltage of 3 V with a low dropout regulator (LDO).The chip was fabricated in Taiwan Semiconductor Manufacturing Company (TSMC)'s 0.35-μm CMOS process,and the temperature coefficient (TC) was measured to be only 2.1×10 6/°C over the temperature range of 40-125 °C after trimming.The power supply rejection (PSR) was 100 dB @ DC and the noise was 42 μV (rms) from 0.1 to 10 Hz.
A low temperature drift curvature-compensated complementary metal oxide semiconductor （CMOS） bandgap ref- erence is proposed. A dual-differential-pair amplifier was employed to add compensation with a high-order term of TInT （T is the thermodynamic temperature） to the traditional 1 st-order compensated bandgap. To reduce the offset of the amplifier and noise of the bandgap reference, input differential metal oxide semiconductor field-effect transistors （MOSFETs） of large size were used in the amplifier and to keep a low quiescent current, these MOSFETs all work in weak inversion. The voltage reference＇s temperature curvature has been further corrected by trimming a switched resistor network. The circuit delivers an output voltage of 3 V with a low dropout regulator （LDO）. The chip was fabricated in Taiwan Semiconductor Manufacturing Company （TSMC）＇s 0.35-gm CMOS process, and the temperature coefficient （TC） was measured to be only 2.1× 10^-6/℃ over the temperature range of-40-125℃ after trimming. The power supply rejection （PSR） was -100 dB @ DC and the noise was 42 μV （rms） from 0.1 to 10 Hz.
基金
Project (No.2008ZX01020-001) supported by the National Science and Technology Major Project,China
