p型金属氧化物半导体场效应晶体管界面态的积累对单粒子电荷共享收集的影响

Influence of interface traps of p-type metal-oxide-semiconductor field effect transistor on single event charge sharing collection

由于负偏置温度不稳定性和热载流子注入,p型金属氧化物半导体场效应晶体管(pMOSFET)将在工作中不断退化,而其SiO2/Si界面处界面态的积累是导致其退化的主要原因之一.采用三维器件数值模拟方法,基于130nm体硅工艺,研究了界面态的积累对相邻pMOSFET之间单粒子电荷共享收集的影响.研究发现,随着pMOSFETSiO2/Si界面处界面态的积累,相邻pMOSFET漏端的单粒子电荷共享收集量均减少.还研究了界面态的积累对相邻反相器中单粒子电荷共享收集所导致的多瞬态脉冲的影响.研究发现,随着pMOSFETSiO2/Si界面处界面态的积累,pMOSFET之间电荷共享收集所导致的多瞬态脉冲压缩,而n型金属氧化物半导体场效应晶体管之间电荷共享收集所导致的多瞬态脉冲展宽.

Due to negative bias temperature instability and hot carrier injection,p-type metal-oxide-semiconductor field effect transistor （MOSFET） will degrade with time,and the accumulation of interface traps is one major reason for the degradation.In this paper,the influence of the accumulation of pMOSFET interface traps on single event charge sharing collection between two adjacent pMOSFET is studied based on three-dimensional numerical simulations on a 130 nm bulk silicon complementary metal-oxide-semiconductor process,the results show that with the accumulated interface traps increasing,the charge sharing collection reducs for both the two pMOSFETs.The influence of the accumulation of pMOSFET interface traps on single event charge sharing induced multiple transient pulses between two adjacent inverters is also studied,the results show that the multiple transient pulses induced by the two pMOSFET charge sharings will be compressed,while multiple transient pulses induced by the two nMOSFET charge sharing will be broadened.