单轴〈111〉应力硅价带结构计算

Calculation of valence band structure of uniaxial 〈111〉 stressed silicon

基于k·p微扰法计算了单轴〈111〉应力作用下硅的价带结构,并与未受应力时体硅的价带结构进行了比较.给出了单轴〈111〉应力作用下硅价带顶处能级的移动、分裂以及空穴有效质量的变化情况.计算所得未受应力作用时硅价带顶处重空穴带、轻空穴带有效质量与相关文献报道体硅有效质量结果一致.拓展了单轴应力硅器件导电沟道应力与晶向的选择范围,给出的硅价带顶处重空穴带、轻空穴带能级间的分裂值和有效质量随应力的变化关系可为单轴〈111〉应力硅其他物理参数的计算提供参考.

The valence band structure of uniaxial 〈111〉 stressed silicon is calculated in the frame of k·p perturbation method and compared with that of unstressed silicon.The valence band energy level shifting,splitting,and variation of the effective mass in the vicinity of the Γ point are presented for different uniaxail 〈111〉 stresses.The effective masses for the heavy and light hole bands in unstressed,our calculation results are in good agreement with the obtained published results of bulk silicon.The study extends the selective range of optimum stresses and crystal direction configuration of conduction channels for uniaxial stressed silicon devices.The obtained results of splitting energy and effective mass may serve as the reference for the calculation of other physical parameters of uniaxial 〈111〉 stressed silicon.