大功率高可靠性垂直腔面发射激光器阵列研究

High Power and High Reliability Vertical-Cavity Surface-Emitting Laser Array

针对980nm激光波长设计了InGaAs/GaAsP材料多周期增益量子阱结构。垒层采用带隙更宽的GaAsP材料代替常规GaAs,改善了效率随温度升高而降低的问题,同时又能满足长寿命激光工作的需要。周期增益量子阱结构提高了有源区的单程增益,降低了阈值,提高了输出功率。制作出新结构的集成单元数为4×4,单元直径30μm的阵列器件,工作电流为5.88A时连续激光功率达到2W;窄脉冲宽度1μs,重复频率100Hz,工作电流60A时输出功率达到30W,且均未达到饱和状态。此阵列器件在工作电流为1～4A时发散角半宽均小于16°。利用加速老化方法对阵列器件的寿命进行了测试,推算出30℃的寿命可达5280h以上,并分析了影响大功率垂直腔面发射激光器(VCSEL)可靠性的主要因素。

We design InGaAs/GaAsP periodic gain structure quantum wells for 980 nm laser wavelength. The GaAsP material with a wider band gap is used as the barrier layer instead of conventional material GaAs. It will solve the problem that the efficiency is decreased with increasing temperature, and will meet the requirement of long-life laser working. The periodic gain structure quantum wells will increase the gain, decrease the threshold current and improve the output power. The new structured 4 × 4 array with an element aperture of 30 μm has a 2 W continuous output power at 5.88 A current. The narrow pulse output power can reach to 30 W at the pulse width of 1 μs, repetition rate of 100 Hz, and work current of 60 A, The results all above have not reached saturation. The far-field angles at the current of 1-4 A are all below 16°. We test the reliability of the array. The life at 30 ℃ is as high as 5280 h or above. The main factors affecting the reliability of high power vertical-cavity surface-emitting laser （VCSEL） are studied.