GaN发光二极管的老化数学模型及寿命测试方法

Mathematical Model of Aging and the Life Test Method for GaN LED

GaN发光二极管因其寿命、效率和环保等优点得到了广泛的应用。寿命问题一直是限制GaN发光二极管应用的核心问题。为了研究GaN发光二极管的老化过程,计算了GaN发光二极管物理参数,分析了GaN发光二极管的深能级缺陷和非辐射复合中心增加的老化原理,并且针对该原理的老化过程进行物理原理的分析推导,进而建立了老化数学模型。同时,利用一组实际的GaN发光二极管大应力老化实验的数据进行计算,提出了利用该数学模型的GaN发光二极管寿命的测试方法和数学计算方法,并计算出实验GaN发光二极管的寿命数值。提出的GaN发光二极管老化数学模型对比传统的阿伦纽斯模型具有针对性强、物理意义明显和寿命预测准等优点,具有很好的实际应用价值。

GaN LED has got an extensive application for its life, efficiency, environmental protection and other advantages. The life question has been the core question, which limits the application of the GaN LED. In order to research the GaN LED aging process, calculate GaN LED physical parameters, such as life time and so on, the aging principle of deep level GaN LED defects and the non-radiation recombination centers increasing are analyzed. And according to the principle, we analyze the physical theory of GaN LED aging process, and finally establish an aging mathematical model for a GaN LED. Meanwhile, through a calculation of a set of practical GaN LED big stress aging experiment data with the aging mathematical model, a test method and mathematics calculation method of the life time are established, and finally we calculate the experimental GaN LED life value. Compared with the traditional Allen News model, the GaN LED aging mathematical model has many advantages such as strong pertinence, obvious physical meaning and more accurate life prediction, and has a very good application value.