利用内光谱响应测量晶体硅太阳电池前表面复合速度

USING INTERNAL QUANTUM EFFICIENCY TO DETERMINE FRONT SURFACE RECOMBINATION VELOCITY OF CRYSTALLINE SILICON SOLAR CELLS

根据发射区电流密度的连续性方程,推导出了发射区杂质服从高斯函数和余误差函数分布情况下短波内光谱响应与前表面复合速度的模型,该模型短波波长的选择与扩散结深有关。并利用该模型对不同扩散条件下的晶体硅太阳电池前表面复合速度进行计算,结果与PC1D模拟结果符合较好。

Front surface recombination velocity of solar cells can be obtained by internal quantum efficiency （IQE） in short-wavelength. However, the existing models are almost dealing with emitter region where the profile is uniformity. Doping concentration in emitter region is obeyed Gaussian or Complementary Error distribution for commercial crystalline silicon solar cells. This paper, based on current density continuity function, deduced the models of measuring front surface recombination velocity. The models adapt to the emitter region profile with Gauss or Complementary Error distribution. The range of short-wavelength is selected by diffusion junction length. At last, the paper using the models calculated front surface recombination velocity of different diffusion emitter and found them matched with PC1D.