硒化Cu,In双层膜制备CuInSe_2薄膜

PREPARATION OF CuInSe_2 THIN FILMS BY SELENIZATION OF Cu, In DOUBLE LAYER FILMS

采用超声波电沉积方法在钼衬底上制备了Cu,In双层膜,随后硒化得到了CuInAe_2薄膜。采用扫描电镜(AEM)、能谱仪(EDA)和X射线衍射仪(XRD)研究了薄膜的表面形貌、化学成分和相组成。结果表明:利用超声波电沉积可以得到颗粒细小、均匀致密的Cu层和In层;采用不同的工艺参数可以调节双层膜的Cu/In比率;双层膜在130℃下,退火6h后进行硒化,可得到符合化学计量比的CuInAe_2薄膜。

The CuInSe2 thin films were prepared on Mo substrate by selenization of Cu, In double layer films, which were obtained by ultrasonic-electrodepositing. Surface morphology, chemical composition and phases of the thin films sequence were investigated by scanning electron morphology（SEM）, energy dispersive spectroscopy （EDS） and X-ray diffraction （XRD）. Results shown that the compact Cu and In films of the fine grains can be obtained by ultrasonieelectrodepositing and the Cu/In ratio can be adjusted by different processing parameters; the ideal stoichiometric CulnSe2 film is obtained by selenization of Cu, In double layer films annealed at 130℃ for 6h.