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电感耦合等离子体质谱法测定高纯镉中的杂质元素 被引量:7

Determination of the Impurities Elements in High purity Cadmium by Inductively Coupled Plasma Mass Spectrometry
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摘要 采用电感耦合等离子体质谱法测定高纯镉中的杂质元素。讨论了镉基体的谱线干扰,比较了镉基体产生的多原子离子的干扰程度,该干扰按CdH、CdO、CdO2 、CdAr、CdOH和CdOH2 顺序递减。研究了不同浓度镉基体对分析物信号的抑制或增强效应,镉的浓度大于0.25g·L- 1 时,对质量数小于100的分析物的信号强度产生抑制,而对质量数大于150 的分析物的信号强度产生增强,采用89Y和209 Bi作内标分别克服基体的抑制和增强效应。测定了高纯镉的As、Be、Co、Cu、Ga、Ge、Mn、Mo、Pb、Ni、Sr、Au、Tl、Th、V 和U 等16 个杂质元素,方法的检测限0.005~0.052 μg·L- 1 ,标准加入回收率82% ~108% 。 A method for the determination of impurity elements in high purity cadmium by inductively coupled plasma mass spectrometry was developed.The spectral interference arising from Cd was discussed and the magnitude of interference by the polyatomic ion of Cd was compared.The effect of the high concentration Cd on the analyte signal was studied.The results showed that Cd possessed both significant suppression effects on the light mass elements signal and enhancement effects on the heavy mass elements signal,and the effects can be corrected by the use of internal standard elements.In this paper,Y and Bi was employed for the light mass elements and the heavy mass elements,respectively.As,Be,Co,Cu,Ga,Ge,Mn,Mo,Pb,Ni,Sr,Au,Tl,Th,V and U in high purity cadmium were determined.Detection limits are 0 005—0 052 μg·L -1 ,and the recoveries of standard addition are 82%—108%.
出处 《光谱学与光谱分析》 SCIE EI CAS CSCD 北大核心 1999年第6期854-857,共4页 Spectroscopy and Spectral Analysis
基金 国家自然科学基金 国家教育部留学归国人员基金
关键词 ICP-MS 等离子体质谱 高纯镉 杂质元素 测定 Inductively coupled plasma mass spectrometry, High purity cadmium, Impurities
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