期刊文献+

基于电流复用技术的LC压控振荡器 被引量:3

Realization of a Novel LC Voltage Controlled Oscillator with Current-Reuse
下载PDF
导出
摘要 介绍了一种改进的LC压控振荡器。该电路采用电流复用技术维持有源负阻的相对稳定,有效增大了输出摆幅,同时没有尾电流上混频引入的1/f噪声,大大减小了相位噪声。另外,与常规VCO不同,采用开关阶跃电容结构,在一定程度上增大了可变电容的调节范围。采用TSMC 0.18μmRF CMOS 1P6M工艺,仿真得到在1.25 V基准电压下供电时,可有950~1050 MHz的线性调节范围,在中心频率1 GHz频偏1 MHz时的相位噪声为-129.3 dBc/Hz,功耗为4.1 mW。 A novel LC voltage controlled oscillator was presented,in which current-reuse technology was employed to reduce effect of negative resistance and improve phase noise.Instead of using inversed-MOS varactors in conventional VCO,the new VCO adopted switched step capacitors to increase tuning range of the varactor.The oscillator was implemented in TSMC's 0.18 μm RF CMOS 1P6M process.Simulation result showed that the proposed VCO had a tuning range from 950 MHz to 1050 MHz and a phase noise of-129.3 dBc/Hz at 1 MHz offset from 1 GHz center frequency,while dissipating 4.1 mW of power from a 1.25 V supply.
出处 《微电子学》 CAS CSCD 北大核心 2011年第4期528-531,共4页 Microelectronics
关键词 压控振荡器 电流复用 开关阶跃电容 相位噪声 VCO Current-reuse Switched step capacitor Phase noise
  • 相关文献

参考文献7

  • 1ANDREANI P, SJOLAND H. Tail current noise suppression in RF CMOS VCOs [J]. IEEE J Sol Sta Circ, 2002, 37(3): 342-348.
  • 2KIM J, SHIN J, KIM S, et al. A wide-band CMOS LC VCO with linearized coarse tuning characteristics [J]. IEEE Trans Circ Syst, 2008, 55(5) : 399-403.
  • 3YUN S J, SHIN S B, CHOI H C, et al. A 1 mW current-reuse CMOS differential LC-VCO with low phase noise [C] // IEEE Int Sol Sta Cite Conf. San Francisco, CA, USA. 2005: 540-616.
  • 4BUNCH R L, RAMAN S. Large-signal analysis of MOS varactors in CMOS Gm LC VCOs[J]. IEEE J Sol Sta Circ, 2003, 38(8) :1325-1332.
  • 5唐长文,何捷,闵昊.一种采用开关阶跃电容的压控振荡器(下):电路设计和实现[J].Journal of Semiconductors,2005,26(11):2182-2190. 被引量:3
  • 6SADAT A, LIU Y, YU C, et al. Analysis and modeling of LC oscillator reliability[J]. IEEE Trans Dev Mater Reliab, 2005, 5(1): 119-126.
  • 7KAO Y H, HSU M T, HSU M C, et al. A systematic approach for low phase noise CMOS VCO design [J]. IEICE Trans Elec, 2003, 86(8): 1427- 1432.

二级参考文献8

  • 1唐长文,何捷,闵昊.一种采用开关阶跃电容的压控振荡器(上):调谐特性的理论分析[J].Journal of Semiconductors,2005,26(10):2010-2021. 被引量:3
  • 2Kral A, Behbahani F, Abidi A. RF-CMOS oscillators with switched tuning. IEEE Custom Integrated Circuits Conf,1998:555.
  • 3Niknejad A M. Multi-mode and wideband VCO design. RF-IC2003.
  • 4Niknejad A M, Meyer R G. Analysis, design, and optimization of spiral inductors and transformers for Si RF IC's. IEEE J Solid-State Circuits, 1998,33(10): 1470.
  • 5Maget J. Varactors and inductors for integrated RF circuits in standard MOS technologies. PhD Dissertation, the University of Bundeswehr Munich,Germany, 2002.
  • 6ASITIC Website:http://rfic.eecs.berkeley.edu/-niknejad/asitic.html.
  • 7Hegazi E,Sjoland H,Abidi A. A filtering techniques to lower LC oscillator phase noise. IEEE J Solid-State Circuits, 2001,36(12):1921.
  • 8Fong N H W,Plouchart J O,Zamdmer N,et al. A 1-V 3.8-5.7-GHz wide-band VCO with differential tuned accumulation MOS varactors for common-mode noise rejection in CMOS SOI Technology. IEEE Trans Microw Theory Tech,2003,51(8):1952.

共引文献2

同被引文献15

引证文献3

二级引证文献3

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部