摘要
通过作者最近建立的关于GAT器件集电结耗尽层电位分布和电场分布的二维解析模型。
By the aid ofthe tw o-dim ensionalanalyticalm odelofthe electricpotential and field distribution in GAT′s collector depletion space in the cut-offstate w hich was estab- lished by the w riters lately, the GAT′s base region punchthrough voltage and the GAT′s avalanche breakdown characteristics w as investigated quantitatively, and the experim entalre- sults, which conclude that the GATs can realize the com patibility betw een high breakdow n voltage and high currentgain, w as explained.
出处
《厦门大学学报（自然科学版）》
CAS
CSCD
北大核心
1999年第6期831-836,共6页
Journal of Xiamen University：Natural Science
基金
国家自然科学基金!(69896260-06)
国家高技术研究发展计划资助!(863-715-010)
关键词
功率器件
基区穿通电压
频率
电流增益
GAT器件
Pow er device, GAT, Base region punchthrough voltage, Frequency, Avalanche breakdow n voltage, Currentgain, Com patibility
