涂层导体用NiW合金基带表面改性研究

Surface modification of NiW alloy substrates for coated conductor

由于硫元素与氧元素化学特性的相近,在Ni基带表面形成硫的c(2×2)-S有序超结构有助于控制在金属Ni基带表面生长的氧化物膜的织构类型。目前,大多数关于在Ni基带表面形成c(2×2)-S超结构的研究报道,都集中于以硫化氢气体作为硫源,采用先吸附后脱附的方法形成该结构。首次提出通过硫化铵水溶液硫化NiW合金基带,再通过热处理去除无序的物理吸附层,形成有序c(2×2)-S超结构的新技术路线。采用AES和RHEED分别对采用新硫化技术处理后的样品表面成分和结构进行研究,并通过XRD对硫化前后的NiW基带上采用化学溶液技术制备的缓冲层织构进行了研究。结果显示,采用新技术处理的金属基带表面有明显的硫元素存在,并且硫在NiW合金基带表面形成了c(2×2)-S超结构。新硫化处理技术改善了NiW基带表面的物理化学特性,有利于氧化物缓冲层的外延生长。

Because of the similarity of chemistry properties between sulfur and oxide,the c（2×2）-S ordered structure formatting on the surface of NiW substrates is conducive to control the texture types of the epitaxial oxide layers on the surface of metal Ni substrates.Most of the previous reports about c（2×2）-S superstructure on the surface of Ni substrates focused on the method which used H2S as the sulfur source,combining with the absorption and desorption to format this structure.A new technology route was put forward in this paper.（NH4）2S aqueous solution was used as the sulfur source and then heat treatment was taken to dislodge the disordered physical adsorption layers.The composition and structure of the sample surfaces treated by the new technology route were investigated by AES and RHEED.The results showed that notable amount of S element could be observed on the metal substrates treated by the new method and the c（2×2）-S superstructure was formatted on the surface of the substrates.The results of the buffer layers preparation on the surface with c（2×2）-S superstructure proved the effectiveness of the new sulfur method on improving the physical chemistry property of the surface of NiW substrates and epitaxial growth of the oxide layers.